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| (R) Z0410xE/F STANDARD TRIACS FEATURES IT(RMS) = 4A VDRM = 400V to 800V IGT 25mA A1 A2 G A1 A2 G DESCRIPTION The Z0410xE/F series of triacs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose switching and phase control applications. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) Parameter RMS on-state current (360 conduction angle) Z0410xE/F Z0410xF ITSM Non repetitive surge peak on-state current (Tj initial = 25C ) I2t Value for fusing Critical rate of rise of on-state current diG /dt = 0.1 A/s. IG = 50 mA Tc= 75 C Ta= 25 C tp = 8.3 ms tp = 10 ms I2 t dI/dt tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10s at 4.5mm from case Value 4 0.95 22 20 2 10 50 - 40, + 150 - 40, + 125 260 C C A2s A/s A Unit A TO202-1 (Plastic) Z0410xE TO202-2 (Plastic) Z0410xF Symbol VDRM VRRM January 1995 Parameter D Repetitive peak off-state voltage Tj = 125C 400 Voltage M 600 S 700 N 800 Unit V 1/6 Z0410xE/F THERMAL RESISTANCES Symbol Rth(j-a) Junction to ambient Parameter Z0410xE Z0410xF Rth(j-c) Rth(j-c) Junction to case for D.C Junction to case for A.C 360 conduction angle (F=50Hz) Value 80 100 10 7.5 C/W C/W Unit C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 0.2 W PGM = 3 W (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt Test Conditions VD=12V (DC) RL=33 VD=12V (DC) RL=33 VD=VDRM RL=3.3k VD=VDRM IG = 40mA IT = 5.5A dIG/dt = 0.5A/s IT= 50 mA Gate open IG= 1.2 IGT Tj= 25C Tj= 25C Tj= 125C Tj= 25C Quadrant I-II-III-IV I-II-III-IV I-II-III-IV I-II-III-IV MAX MAX MIN TYP Sensitivity 10 25 1.5 0.2 2 mA V V s Unit IGM = 1.2 A (tp = 20 s) IH * IL Tj= 25C Tj= 25C I-III-IV II MAX TYP TYP MAX MAX MAX MIN TYP 25 25 50 2 5 200 200 400 5 mA mA VTM * IDRM IRRM dV/dt * ITM= 5.5A tp= 380s VD = VDRM VR = VRRM VD=67%VDRM Gate open (dI/dt)c = 1.8 A/ms Tj= 25C Tj= 25C Tj= 110C Tj= 110C V A V/s (dV/dt)c * Tj= 110C MIN V/s * For either polarity of electrode A2 voltage with reference to electrode A1 ORDERING INFORMATION Z TRIAC TOP GLASS CURRENT 2/6 04 10 SENSITIVITY M E PACKAGES : E=TO202-1 F=TO202-2 VOLTAGE (R) Z0410xE/F Fig.1 : Maximum RMS power dissipation versus RMS on-state current. Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact (TO202-1). P (W) 180 O P(W) Tcase (o C) Rth = 0 o C/W o 5 C/W o 10 C/W 15 o C/W 7 6 5 4 3 2 1 0 0 7 = 180 = 120 = 90 o o o -75 -85 -95 -105 -115 6 5 4 3 2 I T(RMS) (A) = 60 = 30 o o 1 4 0 0 20 Tamb ( C) o 1 2 3 40 60 80 100 120 -125 140 Fig.3 : Maximum RMS power dissipation versus RMS on-state current. Fig.4 : Correlation between maximum RMS power dissipation and maximum allowable temperature (Tamb and Tcase) (TO202-2). P (W) Tcase (o C) P(W) 7 180 O 6 5 4 3 2 1 0 0 1 = 90 = 60 = 30 o o = 180 = 120 o o o 7 6 5 4 3 -105 2 I T(RMS) (A) -75 Rth(j-c) -85 -95 1 4 0 0 Tamb ( C) o Rth(j-a) -115 -125 140 2 3 20 40 60 80 100 120 Fig.5 : RMS on-state current versus case temperature (TO202-1). I T(RMS) (A) Fig.6 : RMS on-state current versus case temperature (TO202-2). I T(RMS) (A) 5 4 3 = 180 o 1 0.8 0.6 = 180 o 2 1 Tcase( C) 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 o 0.4 0.2 Tamb(oC) 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 3/6 (R) Z0410xE/F Fig.6 : Relative variation of thermal impedance versus pulse duration (TO202-1). Fig.7 : Relative variation of thermal impedance junction to ambient versus pulse duration (TO202-2). Zth(j-a)/Rth(j-a) 1.00 Zth/Rth 1.00 Zth (j-c) Zt h( j-a) 0.10 0.10 0.01 1E-3 1E-2 1E-1 1 E +0 1 E +1 tp(s) tp (s) 1E +2 5E +2 0.01 1E-3 1E-2 1E-1 1 E+0 1 E+1 1 E +2 5 E+2 Fig.9 : Relative variation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] Ih[Tj] Ih[Tj=25 o C] Fig.10 : Non repetitive surge peak on-state current versus number of cycles. ITSM(A) Tj initial = 25 C o 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 Igt 20 15 10 Ih 5 Tj(oC) Number of cycles -40 -20 0 20 40 60 80 100 120 140 0 1 10 100 1000 Fig.11 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of I2t. I TSM (A). I2 t (A2 s) Fig.12 : On-state characteristics (maximum values). 100 Tj initial = 25oC 100 I TM (A) I 10 TSM Tj initial o 25 C 10 Tj max 1 I2 t tp (ms) Tj max Vto =0.98V Rt =0.180 VTM (V) 1 1 10 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 4/6 (R) Z0410xE/F PACKAGE MECHANICAL DATA TO202-1 (Plastic) DIMENSIONS Millimeters Inches Typ. Min. Max. Typ. Min. Max. A G I B J H REF. A B C D F G M F P N1 N D 10.1 13.7 7.3 10.5 1.5 3.2 0.51 3.16 1.5 4.5 5.3 2.54 1.4 0.7 0.100 3.20 0.059 0.177 0.126 0.020 0.540 0.287 0.413 0.398 0.059 C O H I J M N N1 O P 0.124 0.126 0.209 0.055 0.028 Marking : type number Weight : 1.4 g 5/6 (R) Z0410xE/F PACKAGE MECHANICAL DATA TO202-2 (Plastic) DIMENSIONS REF. A B C D E F 1.2 7.3 10.5 7.4 1.5 0.51 1.5 4.5 5.3 2.54 1.4 0.7 0.100 0.055 0.028 0.020 0.059 0.177 0.209 Millimeters Inches Typ. Min. Max. Typ. Min. Max. 10.1 0.047 0.287 0.413 0.290 0.059 0.398 A E B J H C O F P N1 N D M H J M N N1 O P Marking : type number Weight : 1.0 g Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1995 SGS-THOMSON Microelectronics - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 6/6 (R) |
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